Estimation of Weibull shape-parameters for two independent competing risksKANIE, H; NONAKA, Y.IEEE transactions on reliability. 1985, Vol 34, Num 1, pp 53-56, issn 0018-9529Article

Localized luminescence centers of InGaNKANIE, H; TSUKAMOTO, N; KOAMI, H et al.Journal of crystal growth. 1998, Vol 189-90, pp 52-56, issn 0022-0248Conference Paper

Direction of excited carriers from low in facets of InGaN microcrystals observed in the highly spatially resolved cathodoluminescent imagesKANIE, H; KOBAYASHI, S.Proceedings - Electrochemical Society. 2004, pp 529-534, issn 0161-6374, isbn 1-56677-419-5, 6 p.Conference Paper

Photoluminescence of ZnS_1-xSe_x:Te prepared by solution growth using Sb-chalcogenides as solventARAKI, H; KANIE, H; SANO, M et al.Japanese journal of applied physics. 1995, Vol 34, Num 6A, pp 3120-3123, issn 0021-4922, 1Article

Growth of ZnS_xSe_1-x crystals from ZnSe-Sb₂S₃-Sb₂Se₃ solutionsARAKI, H; KANIE, H; SANO, M et al.Japanese journal of applied physics. 1994, Vol 33, Num 1A, pp 235-239, issn 0021-4922, 1Article

Observation of dark spots and dark lines of GaN microcrystals grown by nitridation of gallium sulfideKANIE, H; SUGIMOTO, K; OKADO, H et al.Physica status solidi. A. Applied research. 2001, Vol 188, Num 2, pp 481-484, issn 0031-8965Conference Paper

Lamé-mode miniaturized quartz temperature sensorsKANIE, H; KAWASHIMA, H.IEEE transactions on ultrasonics, ferroelectrics, and frequency control. 2000, Vol 47, Num 2, pp 341-345, issn 0885-3010Article

Optical properties of Te-doped Ca_xSr_1-xSKATO, T; KAGAWA, H; KANIE, H et al.Journal of crystal growth. 2000, Vol 214-15, pp 958-962, issn 0022-0248Conference Paper

Crystal growth of SrS from Te solution and its optical propertiesKANIE, H; KAGAWA, H; KATO, T et al.Journal of crystal growth. 1999, Vol 197, Num 3, pp 504-506, issn 0022-0248Conference Paper

Photoluminescence in Sb-doped ZnSNAGANO, M; KANIE, H; YOSHIDA, I et al.Japanese journal of applied physics. 1991, Vol 30, Num 9A, pp 1915-1918, issn 0021-4922, 1Article

Photoluminescence in ZnSe:Te prepared by solution growthARAKI, H; KANIE, H; YOSHIDA, I et al.Japanese journal of applied physics. 1991, Vol 30, Num 9A, pp 1919-1923, issn 0021-4922, 1Article

High electron mobility Zn polar ZnMgO/ZnO heterostructures grown by molecular beam epitaxyTAMPO, H; MATSUBARA, K; YAMADA, A et al.Journal of crystal growth. 2007, Vol 301-302, pp 358-361, issn 0022-0248, 4 p.Conference Paper

Optical properties of InGaAsP multiple quantum well edge-emitting light-emitting diodeKASHIMA, Y; MATOBA, A; TAKANO, H et al.Japanese journal of applied physics. 1994, Vol 33, Num 12A, pp 6584-6585, issn 0021-4922, 1Article

Epitaxial growth of ZnS and GaP by molecular beam depositionKANIE, H; ARAKI, H; ISHIZAKA, K et al.Journal of crystal growth. 1994, Vol 138, Num 1-4, pp 145-149, issn 0022-0248Conference Paper